Part Number Hot Search : 
JANTXV2 2SB1323 ADR291 INTERSIL 106MBAAQ A680M A1909 MP6922A
Product Description
Full Text Search
 

To Download MUN5212DW1T1 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  1 3 2 sc-88/sot-363 6 4 5 npn silicon surface mount transistors with monolithic bias resistor network 1 3 2 6 4 5 q 1 q 2 r 1 r 2 r 1 r 2 7x marking diagram 13 2 6 4 5 device marking information see specific marking information in the device marking table on page 2 of this data sheet. 7x = device marking = (see page 2) 256 (note 2.) 1.5 (note 1.) 2.0 (note 2.) maximum ratings (t a = 25c unless otherwise noted, common for q 1 and q 2 ) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation p d 187 (note 1.) mw t a = 25c derate above 25c mw/c thermal resistance C r ja 670 (note 1.) c/w junction-to-ambient 490 (note 2.) characteristic (both junctions heated) symbol max unit total device dissipation t a = 25c derate above 25c p d 250 (note 1.) 385 (note 2.) 2.0 (note 1.) 3.0 (note 2.) mw mw/c thermal resistance C junction-to-ambient r ja 493 (note 1.) 325 (note 2.) c/w thermal resistance C junction-to-lead r jl 188 (note 1.) 208 (note 2.) c/w junction and storage temperature t j , t stg C55 to +150 c 1. frC4 @ minimum pad 2. frC4 @ 1.0 x 1.0 inch pad the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseCemitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the mun5211dw1t1 series, two brt devices are housed in the sotC363 package which is ideal for low power surface mount applications where board space is at a premium. ? simplifies circuit design ? reduces board space ? reduces component count 2014.0? www.willas.com.tw rev.  dual bias resistor transistors sc-88/sot-363 package mun52xxdw1t1 series {, 1 ? p r e l i m i n a r y
device marking , resistor values and ordering information device package marking r1(k) r2(k) shipping mun5211dw1t1 sot-363 7a 10 10 3000/tape&reel mun5214dw1t1 sot-363 7d 10 47 3000/tape&reel mun5215dw1t1 sot-363 7e 10  3000/tape&reel mun5216dw1t1 sot-363 7f 4.7  3000/tape&reel mun5230dw1t1 sot-363 7g 1 1 3000/tape&reel mun5231dw1t1 sot-363 7h 2.2 2.2 3000/tape&reel mun5232dw1t1 sot-363 7j 4.7 4.7 3000/tape&reel mun5233dw1t1 sot-363 7k 4.7 47 3000/tape&reel mun5234dw1t1 sot-363 7l 22 47 3000/tape&reel mun5235dw1t1 sot-363 7m 2.2 47 3000/tape&reel mun5236dw1t1 sot-363 7n 100 100 3000/tape&reel mun5237dw1t1 sot-363 7p 47 22 3000/tape&reel MUN5212DW1T1 sot-363 7b 22 22 3000/tape&reel mun5213dw1t1 sot-363 7c 47 47 3000/tape&reel 2014.0? www.willas.com.tw rev.  dual bias resistor transistors sc-88/sot-363 package mun52xxdw1t1 series {, 2 ? p r e l i m i n a r y
electrical characteristics (t a = 25c unless otherwise noted, common for q 1 and q 2 ) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo C C 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo C C 500 nadc emitter-base cutoff current mun5211dw1t1 (v eb = 6.0 v, i c = 0) MUN5212DW1T1 mun5213dw1t1 mun5214dw1t1 mun5215dw1t1 mun5216dw1t1 mun5230dw1t1 mun5231dw1t1 mun5232dw1t1 mun5233dw1t1 mun5234dw1t1 mun5235dw1t1 mun5236dw1t1 mun5237dw1t1 i ebo C C C C C C C C C C C C C C C C C C C C C C C C C C C C 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 C C vdc collector-emitter breakdown voltage(note 4.)(i c = 2.0 ma,i b =0) v (br)ceo 50 C C vdc 4. pulse test: pulse width < 300 s, duty cycle < 2.0% 2014.0? www.willas.com.tw rev.  dual bias resistor transistors sc-88/sot-363 package mun5211dw1t1h series {, 3 ? p r e l i m i n a r y
electrical characteristics (t a = 25c unless otherwise noted, common for q 1 and q 2 ,) (continued) characteristic symbol min typ max unit on characteristics (note 5.) dc current gain mun521 1dw1t1 (v ce = 10 v, i c = 5.0 ma) MUN5212DW1T1 mun5213dw1t1 mun5214dw1t1 mun5215dw1t1 mun5216dw1t1 mun5230dw1t1 mun5231dw1t1 mun5232dw1t1 mun5233dw1t1 mun5234dw1t1 mun5235dw1t1 mun5236dw1t1 mun5237dw1t1 h fe C C C C C C C C C C C C C C 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ? ) mun5211dw1t1 MUN5212DW1T1 mun5214dw1t1 mun5215dw1t1 mun5216dw1t1 mun5230dw1t1 mun5231dw1t1 mun5232dw1t1 mun5233dw1t1 mun5234dw1t1 mun5235dw1t1 mun5213dw1t1 mun5236dw1t1 mun5237dw1t1 v ol C C C C C C C C C C C C C C C C C C C C C C C C C C C C 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ? ) (v cc = 5.0 v, v b = 5.5 v, r l = 1.0 k ? ) (v cc = 5.0 v, v b = 4.0 v, r l = 1.0 k ? ) output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ? ) (v cc = 5.0 v, v b = 0.05 v, r l = 1.0 k ? ) mun5230dw1t1 (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ? ) mun5215dw1t1 mun5216dw1t1 mun5233dw1t1 collector-emitter saturation voltage (i c = 10ma,i b = 0.3 ma) v ce(sat) C C 0.25 vdc (i c = 10ma, i b = 5ma) mun5230dw1t1/mun5231dw1t1 (i c = 10ma, i b = 1ma) mun5215dw1t1/mun5216dw1t1 mun5232dw1t1/mun5233dw1t1/mun5234dw1t1 v oh 4.9 C C vdc 5. pulse test: pulse width < 300 ms, duty cycle < 2.0% 2014.0? www.willas.com.tw rev.  dual bias resistor transistors sc-88/sot-363 package mun5211dw1t1h series {, 4 ? p r e l i m i n a r y
input resistor mun5211dw1t1 MUN5212DW1T1 mun5213dw1t1 mun5214dw1t1 mun5215dw1t1 mun5216dw1t1 mun5230dw1t1 mun5231dw1t1 mun5232dw1t1 mun5233dw1t1 mun5234dw1t1 mun5235dw1t1 mun5236dw1t1 mun5237dw1t1 electrical characteristics (t a = 25c unless otherwise noted, common for q 1 and q 2 ,) (continued) characteristic symbol min typ max unit on characteristics (note 6.) r 1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k ? resistor ratio mun5211dw1t1/MUN5212DW1T1 mun5213dw1t1/mun5236dw1t1 mun5214dw1t1/mun5215dw1t1 mun5216dw1t1/mun5230dw1t1 mun5231dw1t1/mun5232dw1t1 mun5233dw1t1 mun5234dw1t1 mun5235dw1t1 mun5237dw1t1 r 1 /r 2 0.8 0.17 C 0.8 0.055 0.38 0.038 1.7 1.0 0.21 C 1.0 0.1 0.47 0.047 2.1 1.2 0.25 C 1.2 0.185 0.56 0.056 2.6 6. pulse test: pulse width < 300 ms, duty cycle < 2.0% p d , power dissipation (mw) 300 250 200 150 100 50 0 t a , ambient temperature (c) figure 1. derating curve C50 0 50 100 150 833c 2014.0? www.willas.com.tw rev.  dual bias resistor transistors sc-88/sot-363 package mun52xxdw1t1 series {, 5 ? p r e l i m i n a r y
i c , collector current (ma) figure 2. v ce(sat) versus i c v r , reverse bias voltage (volts) figure 4. output capacitance i c , collector current (ma) figure 6. input voltage versus output current i c , collector current (ma) figure 3. dc current gain v in , input voltage (volts) i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) v in , input voltage (volts) figure 5. output current versus input voltage 1 0.1 0.01 0.001 02 0 4 05 0 h fe , dc current gain (normalized) 1000 100 10 1 10 100 4 3 2 1 0 01 02 03 04 05 0 c ob capacitance (pf) 100 10 1 0.1 0.01 0.001 012345678910 10 1 0.1 01 02 03 04 05 0 typical electrical characteristics ? mun5211dw1t1 2014.0? www.willas.com.tw rev.  dual bias resistor transistors sc-88/sot-363 package mun52xxdw1t1 series {, 6 ? p r e l i m i n a r y
typical electrical characteristics ? MUN5212DW1T1 i c , collector current (ma) figure 7. v ce(sat) versus i c v r , reverse bias voltage (volts) figure 9. output capacitance i c ,collector current (ma) figure 11. input voltage versus output current i c , collector current (ma) figure 8. dc current gain v in , input voltage (volts) i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) v in , input voltage (volts) figure 10. output current versus input oltage 10 1 0.1 0.01 02 0 4 05 0 h fe , dc current gain (normalized) 1000 100 10 1 10 100 4 3 2 1 0 01 02 03 04 05 0 c ob capacitance (pf) 100 10 1 0.1 0.01 0.001 012345678910 100 10 1 0.1 01 02 03 04 05 0 2014.0? www.willas.com.tw rev.  dual bias resistor transistors sc-88/sot-363 package mun52xxdw1t1 series {, 7 ? p r e l i m i n a r y
typical electrical characteristics ? mun5213dw1t1 i c , collector current (ma) figure 12. v ce(sat) versus i c v r , reverse bias voltage (volts) figure 14. output capacitance i c , collector current (ma) figure 16. input voltage versus output current i c , collector current (ma) figure 13. dc current gain v in , input voltage (volts) i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) v in , input voltage (volts) figure 15. output current versus input oltage 10 1 0.1 0.01 02 0 4 0 5 0 h fe , dc current gain (normalized) 1000 100 10 1 10 100 1 0.8 0.6 0.4 0.2 0 01 02 03 04 05 0 c ob capacitance (pf) 100 10 1 0.1 0.01 0.001 012345678910 100 10 1 0.1 01 02 03 04 05 0 2014.0? www.willas.com.tw rev.  dual bias resistor transistors sc-88/sot-363 package mun52xxdw1t1 series {, 8 ? p r e l i m i n a r y
typical electrical characteristics ? mun5214dw1t1 i c , collector current (ma) figure 17. v ce(sat) versus i c v r , reverse bias voltage (volts) figure 19. output capacitance i c ,collector current (ma) figure 21. input voltage versus output current i c , collector current (ma) figure 18. dc current gain v in , input voltage (volts) i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) v in , input voltage (volts) figure 20. output current versus input oltage 1 0.1 0.01 0.001 02 04 06 08 0 h fe , dc current gain (normalized) 300 250 200 150 100 50 0 1 2 3 4 5101520405060708090100 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 1015202530 3540 4550 c ob capacitance (pf) 100 10 1 012345678910 10 1 0.1 01 02 03 04 05 0 2014.0? www.willas.com.tw rev.  dual bias resistor transistors sc-88/sot-363 package mun52xxdw1t1 series {, 9 ? p r e l i m i n a r y
outline drawing dimensions in inches and (millimeters) sot-363 rev.d .056(1.40) .047(1.20) .096(2.45) .071(1.80) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .004(0.10) .004(0.10)max. .087(2.20) .071(1.80) .054(1.35) .045(1.15) .021(0.55) .030(0.75) dual bias resistor transistors sc-88/sot-363 package mun52xxdw1t1 series 1 2 3 456 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 2014.0? www.willas.com.tw rev.  pin 1. emitter 2 2. base 2 3. collector 1 4.emitter 1 5. base 1 6.collector 2 {, 10 ? p r e l i m i n a r y
 suggested soldering pad layout sot-363 rev b dimensions in inches and (millimeters) .015(0.40) .0 (0. 0) .026(0.65) .075(1.90) 2014.08 www.willas.com.tw rev. a o]?z?]??}?d?v?]??}?? ^r??l^kdr?? package  dhe????td ^?]? 6 2 {, 11 ? p r e l i m i n a r y
*** disclaimer *** willas reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. willas or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. data sheet specifications and its information contained are intended to provide a product description only. "typical" parameters which may be included on willas data sheets and/ or specifications can and do vary in different applications and actual perfor mance may vary over time. willas does not assume any liability arising out of the application or use of any product or circuit. willas products are not designed, intended or authorized for use in medical, life - saving implant or other applications intended for life - sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of willas . customers using or selling willas component s for use in such applications do so at their own risk and shall agree to fully indemnify willas inc and its subsidiaries harmless against all claims, damages and expenditures . device? pn? packing ? tape&reel: ?3 kpcs/reel ? note: ? (1) rohs and haloge free produc.for.packing.code suffixh. ? part numbe r h (1) -ws o]?z?]??}?d?v?]??}?? ^r??l^kdr?? package  dhe????td ^?]? 2014.0? www.willas.com.tw rev.  {, 12 ? p r e l i m i n a r y


▲Up To Search▲   

 
Price & Availability of MUN5212DW1T1

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X